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| PartNumber | IRF9520NPBF | IRF9520NPBF,F9520N,IRF95 | IRF9520NPBF,IRF9520N |
| Description | MOSFET PLANAR_MOSFETS | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 6.8 A | - | - |
| Rds On Drain Source Resistance | 480 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 31 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 47 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SP001554524 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF9520NPBF | MOSFET PLANAR_MOSFETS | |
| IRF9520NPBF | MOSFET P-CH 100V 6.8A TO-220AB | ||
| IRF9520NPBF,F9520N,IRF95 | ブランドニューオリジナル | ||
| IRF9520NPBF,IRF9520N | ブランドニューオリジナル |