 |  | | |
| PartNumber | IRFD110PBF | IRFD110PBF,IRFD110 | IRFD110PBF,IRFD110,FD110 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | HVMDIP-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 3.37 mm | - | - |
| Length | 6.29 mm | - | - |
| Series | IRFD | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.010582 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFD110PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | |
Vishay |
IRFD110PBF | MOSFET N-CH 100V 1A 4-DIP | |
| IRFD110PBF,IRFD110 | ブランドニューオリジナル | ||
| IRFD110PBF,IRFD110,FD110 | ブランドニューオリジナル | ||
| IRFD110PBF-CN | ブランドニューオリジナル | ||
| IRFD110PBF-PH | ブランドニューオリジナル |