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| PartNumber | IRFD220PBF | IRFD220PBF,IRFD220 | IRFD220PBF. |
| Description | MOSFET N-CH 200V HEXFET MOSFET HEXDI | N CHANNEL MOSFET, 200V, 800mA, HD-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800mA, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | HVMDIP-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 800 mA | - | - |
| Rds On Drain Source Resistance | 800 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 14 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | IRFD | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.6 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 7.2 ns | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFD220PBF | MOSFET N-CH 200V HEXFET MOSFET HEXDI | |
Vishay |
IRFD220PBF | MOSFET N-CH 200V 800MA 4-DIP | |
| IRFD220PBF,IRFD220 | ブランドニューオリジナル | ||
| IRFD220PBF. | N CHANNEL MOSFET, 200V, 800mA, HD-1, Transistor Polarity:N Channel, Continuous Drain Current Id:800mA, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, |