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| PartNumber | IRFIB41N15DPBF | IRFIB41N15D | IRFIB41N15DPBF,IRFIB41N1 |
| Description | MOSFET 150V SINGLE N-CH 45mOhms 72nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 41 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 63 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP001572654 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFIB41N15DPBF | MOSFET 150V SINGLE N-CH 45mOhms 72nC | |
| IRFIB41N15DPBF | RF Bipolar Transistors MOSFET 150V SINGLE N-CH 45mOhms 72nC | ||
| IRFIB41N15D | ブランドニューオリジナル | ||
| IRFIB41N15DPBF,IRFIB41N1 | ブランドニューオリジナル |