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| PartNumber | IRFR3504ZTR | IRFR3504ZTRL | IRFR3504ZTRLPBF |
| Description | MOSFET N-CH 40V 42A DPAK | MOSFET N-CH 40V 42A DPAK | RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC |
| Manufacturer | - | - | International Rectifier |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 90 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 38 ns |
| Rise Time | - | - | 74 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 77 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 9 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 30 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Qg Gate Charge | - | - | 30 nC |
| Forward Transconductance Min | - | - | 32 S |
| Channel Mode | - | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR3504ZTRPBF | MOSFET MOSFT 40V 77A 9mOhm 30nC Qg | |
Infineon Technologies |
IRFR3504ZTR | MOSFET N-CH 40V 42A DPAK | |
| IRFR3504ZTRL | MOSFET N-CH 40V 42A DPAK | ||
| IRFR3504ZTRR | MOSFET N-CH 40V 42A DPAK | ||
| IRFR3504ZTRPBF | MOSFET N-CH 40V 42A DPAK | ||
| IRFR3504ZTRRPBF | MOSFET N-CH 40V 42A DPAK | ||
| IRFR3504ZTRLPBF | RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC | ||
| IRFR3504ZPBF | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 7.3 Milliohms, ID 42A, D-Pak (TO-252AA), PD 90W |