 | | |
| PartNumber | IRFS3607TRLPBF | IRFS3607PBF |
| Description | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V |
| Id Continuous Drain Current | 80 A | 80 A |
| Rds On Drain Source Resistance | 7.34 mOhms | 7.34 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 56 nC | 56 nC |
| Pd Power Dissipation | 140 W | 140 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon / IR | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001578296 | SP001557342 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Forward Transconductance Min | - | 115 S |
| Fall Time | - | 96 ns |
| Rise Time | - | 110 ns |
| Typical Turn Off Delay Time | - | 43 ns |
| Typical Turn On Delay Time | - | 16 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFS3607TRLPBF | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | |
Infineon Technologies |
IRFS3607PBF | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | |
Infineon Technologies |
IRFS3607PBF | Darlington Transistors MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | |
| IRFS3607TRLPBF | MOSFET N-CH 75V 80A D2PAK | ||
| IRFS3607 | ブランドニューオリジナル | ||
| IRFS3607PBF,FS3607,IRFS3 | ブランドニューオリジナル | ||
| IRFS3607PBF,IRFS3607TRPB | ブランドニューオリジナル |