IRFS38N20D

IRFS38N20DTRRP vs IRFS38N20DPBF vs IRFS38N20DTRLP

 
PartNumberIRFS38N20DTRRPIRFS38N20DPBFIRFS38N20DTRLP
DescriptionMOSFET 200V 1 N-CH HEXFET 54mOhms 60nCMOSFET N-CH 200V 43A D2PAKMOSFET N-CH 200V 43A D2PAK
ManufacturerInfineonIRIR
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance54 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation3.8 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelTubeReel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min17 S--
Fall Time47 ns47 ns47 ns
Product TypeMOSFET--
Rise Time95 ns95 ns95 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns29 ns29 ns
Typical Turn On Delay Time16 ns16 ns16 ns
Part # AliasesSP001565034--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-320 W320 W
Vgs Gate Source Voltage-30 V30 V
Id Continuous Drain Current-44 A44 A
Vds Drain Source Breakdown Voltage-200 V200 V
Rds On Drain Source Resistance-54 mOhms54 mOhms
Qg Gate Charge-60 nC60 nC
メーカー モデル 説明 RFQ
Infineon / IR
Infineon / IR
IRFS38N20DTRRP MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
Infineon Technologies
Infineon Technologies
IRFS38N20DTRRP MOSFET N-CH 200V 43A D2PAK
IRFS38N20DPBF MOSFET N-CH 200V 43A D2PAK
IRFS38N20DTRLP MOSFET N-CH 200V 43A D2PAK
IRFS38N20DTRLP-CUT TAPE ブランドニューオリジナル
IRFS38N20D ブランドニューオリジナル
IRFS38N20DTR ブランドニューオリジナル
IRFS38N20DTRL MOSFET Transistor, N-Channel, TO-263AB
IRFS38N20DTRLPBF ブランドニューオリジナル
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