IRG4BC20W-S

IRG4BC20W-SPBF vs IRG4BC20W-SPBF. vs IRG4BC20W-S

 
PartNumberIRG4BC20W-SPBFIRG4BC20W-SPBF.IRG4BC20W-S
DescriptionIGBT Transistors 600V WARP 60-150KHZ DISCRETE IGBTIGBT 600V 13A 60W D2PAK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C13 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube-Tube
Continuous Collector Current Ic Max13 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001547922--
Unit Weight0.009185 oz--
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--60W
Reverse Recovery Time trr---
Current Collector Ic Max--13A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--52A
Vce on Max Vge Ic--2.6V @ 15V, 6.5A
Switching Energy--60μJ (on), 80μJ (off)
Gate Charge--26nC
Td on off 25°C--22ns/110ns
Test Condition--480V, 6.5A, 50 Ohm, 15V
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IRG4BC20W-SPBF IGBT Transistors 600V WARP 60-150KHZ DISCRETE IGBT
IRG4BC20W-SPBF. ブランドニューオリジナル
Infineon Technologies
Infineon Technologies
IRG4BC20W-SPBF IGBT Transistors 600V WARP 60-150KHZ DISCRETE IGBT
IRG4BC20W-S IGBT 600V 13A 60W D2PAK
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