IRG4BC30UD

IRG4BC30UDPBF vs IRG4BC30UD vs IRG4BC30UD G4BC30UD IR

 
PartNumberIRG4BC30UDPBFIRG4BC30UDIRG4BC30UD G4BC30UD IR
DescriptionIGBT Transistors 600V UltraFast 8-60kHz
ManufacturerInfineonIR-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max23 A--
Height8.77 mm--
Length10.54 mm--
Width4.69 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001547712--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IRG4BC30UDPBF IGBT Transistors 600V UltraFast 8-60kHz
IRG4BC30UDPBF IGBT 600V 23A 100W TO220AB
IRG4BC30UD ブランドニューオリジナル
IRG4BC30UD G4BC30UD IR ブランドニューオリジナル
IRG4BC30UDPBF,G4BC30UD,I ブランドニューオリジナル
IRG4BC30UDPF ブランドニューオリジナル
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