IRG4BC40W-S

IRG4BC40W-STRRP vs IRG4BC40W-SPBF vs IRG4BC40W-S

 
PartNumberIRG4BC40W-STRRPIRG4BC40W-SPBFIRG4BC40W-S
DescriptionIGBT Modules 600V 40AD2PAKIGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBTIGBT 600V 40A 160W D2PAK
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT ModulesIGBT TransistorsIC Chips
RoHSYY-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Continuous Collector Current at 25 C40 A40 A-
Package / CaseD-PAK-3DPAK-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelTubeTube
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
Width9.65 mm9.65 mm-
BrandInfineon / IRInfineon Technologies-
Mounting StyleSMD/SMTSMD/SMT-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity8001000-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001537010SP001536114-
Unit Weight0.009185 oz0.009185 oz-
Technology-Si-
Collector Emitter Saturation Voltage-2.05 V-
Pd Power Dissipation-160 W-
Continuous Collector Current Ic Max-40 A-
Gate Emitter Leakage Current-100 nA-
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--160W
Reverse Recovery Time trr---
Current Collector Ic Max--40A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--160A
Vce on Max Vge Ic--2.5V @ 15V, 20A
Switching Energy--110μJ (on), 230μJ (off)
Gate Charge--98nC
Td on off 25°C--27ns/100ns
Test Condition--480V, 20A, 10 Ohm, 15V
メーカー モデル 説明 RFQ
Infineon / IR
Infineon / IR
IRG4BC40W-STRRP IGBT Modules 600V 40AD2PAK
Infineon Technologies
Infineon Technologies
IRG4BC40W-SPBF IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC40W-STRRP IGBT Modules 600V 40AD2PAK
IRG4BC40W-SPBF IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC40W-S IGBT 600V 40A 160W D2PAK
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