IRG4PC50UD-E

IRG4PC50UD-EPBF vs IRG4PC50UD-E vs IRG4PC50UD-EFBF

 
PartNumberIRG4PC50UD-EPBFIRG4PC50UD-EIRG4PC50UD-EFBF
DescriptionIGBT Transistors 600V UltraFast 8-60kHz
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V2 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C55 A55 A-
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C- 55 C-
PackagingTubeBulk-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001544774--
Unit Weight1.340411 oz1.340411 oz-
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247AC-
Power Max-200W-
Reverse Recovery Time trr-50ns-
Current Collector Ic Max-55A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-220A-
Vce on Max Vge Ic-2V @ 15V, 27A-
Switching Energy-990μJ (on), 590μJ (off)-
Gate Charge-180nC-
Td on off 25°C-46ns/140ns-
Test Condition-480V, 27A, 5 Ohm, 15V-
Pd Power Dissipation-200 W-
Collector Emitter Voltage VCEO Max-600 V-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IRG4PC50UD-EPBF IGBT Transistors 600V UltraFast 8-60kHz
Infineon Technologies
Infineon Technologies
IRG4PC50UD-EPBF IGBT Transistors 600V UltraFast 8-60kHz
IRG4PC50UD-E ブランドニューオリジナル
IRG4PC50UD-EFBF ブランドニューオリジナル
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