IRGB4B

IRGB4B60KPBF vs IRGB4B60KD1PBF vs IRGB4B60K

 
PartNumberIRGB4B60KPBFIRGB4B60KD1PBFIRGB4B60K
DescriptionIGBT Transistors 600V Low VCEonIGBT Transistors 600V Low-Vceon Non Punch Through
ManufacturerInfineonInfineon TechnologiesIR
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V2.5 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C12 A12 A-
Pd Power Dissipation63 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C--
SeriesRC--
PackagingTubeTube-
Height9.02 mm--
Length10.67 mm--
Width4.83 mm--
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesSP001546064--
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-63W-
Reverse Recovery Time trr-93ns-
Current Collector Ic Max-11A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-NPT-
Current Collector Pulsed Icm-22A-
Vce on Max Vge Ic-2.5V @ 15V, 4A-
Switching Energy-73μJ (on), 47μJ (off)-
Gate Charge-12nC-
Td on off 25°C-22ns/100ns-
Test Condition-400V, 4A, 100 Ohm, 15V-
Pd Power Dissipation-63 W-
Collector Emitter Voltage VCEO Max-600 V-
メーカー モデル 説明 RFQ
Infineon / IR
Infineon / IR
IRGB4B60KPBF IGBT Transistors 600V Low VCEon
Infineon Technologies
Infineon Technologies
IRGB4B60KD1PBF IGBT Transistors 600V Low-Vceon Non Punch Through
IRGB4B60KPBF IGBT Transistors 600V Low VCEon
IRGB4B60K ブランドニューオリジナル
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