 | |  | |
| PartNumber | IRLH5036TR2PBF | IRLH5036TRPBF | IRLH5036TRPBF. |
| Description | MOSFET N-CH 60V 100A 5X6 PQFN | MOSFET N-CH 60V 100A 8-PQFN | |
| Manufacturer | IR | IR | - |
| Product Category | FETs - Single | FETs - Single | - |
| Packaging | - | Reel | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PQFN-8 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 3.6 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 48 ns | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 5.5 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 28 ns | - |
| Typical Turn On Delay Time | - | 23 ns | - |
| Qg Gate Charge | - | 90 nC | - |
| Forward Transconductance Min | - | 109 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLH5036TR2PBF | MOSFET N-CH 60V 100A 5X6 PQFN | |
| IRLH5036TRPBF | MOSFET N-CH 60V 100A 8-PQFN | ||
| IRLH5036TRPBF. | ブランドニューオリジナル |