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| PartNumber | IRLHS2242TRPBF | IRLHS2242TR2PBF |
| Description | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | MOSFET MOSFT PCh -30V -8.5A 31mOhm -4.5V cpbl |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-6 | PQFN-6 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 15 A | 7.2 A |
| Rds On Drain Source Resistance | 31 mOhms | 31 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 12 nC | 12 nC |
| Pd Power Dissipation | 9.6 W | 2.1 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 0.9 mm | 0.9 mm |
| Length | 2 mm | 2 mm |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 2 mm | 2 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001568502 | SP001569002 |
| Unit Weight | 0.001164 oz | 0.017637 oz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 10 S |
| Fall Time | - | 66 ns |
| Rise Time | - | 54 ns |
| Typical Turn Off Delay Time | - | 54 ns |
| Typical Turn On Delay Time | - | 7.9 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLHS2242TRPBF | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | |
| IRLHS2242TR2PBF | MOSFET P-CH 20V 5.8A 2X2 PQFN | ||
| IRLHS2242TRPBF | MOSFET P-CH 20V 15A 2X2 PQFN | ||
Infineon / IR |
IRLHS2242TR2PBF | MOSFET MOSFT PCh -30V -8.5A 31mOhm -4.5V cpbl | |
| IRLHS2242TRPBF IRLHS22 | ブランドニューオリジナル | ||
| IRLHS2242TRPBF. | ブランドニューオリジナル | ||
| IRLHS2242TR2PBF-CUT TAPE | ブランドニューオリジナル |