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| PartNumber | IXBH5N160G | IXBH50N360HV | IXBH5N160 |
| Description | IGBT Transistors 5 Amps 1600V | ||
| Manufacturer | IXYS | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.6 kV | - | - |
| Collector Emitter Saturation Voltage | 4.9 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 5.7 A | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IXBH5N160 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 6 A | - | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Continuous Collector Current | 5.7 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | BIMOSFET | - | - |
| Unit Weight | 0.229281 oz | - | - |