IXFH60N2

IXFH60N20 vs IXFH60N20F vs IXFH60N25Q

 
PartNumberIXFH60N20IXFH60N20FIXFH60N25Q
DescriptionMOSFET 60 Amps 200V 0.033 RdsMOSFETMOSFET 60 Amps 250V 0.047 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance33 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH60N20-IXFH60N25
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Fall Time26 ns-25 ns
Product TypeMOSFET--
Rise Time63 ns-60 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns-80 ns
Typical Turn On Delay Time38 ns-27 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--60 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--47 mOhms
メーカー モデル 説明 RFQ
Littelfuse
Littelfuse
IXFH60N20 MOSFET 60 Amps 200V 0.033 Rds
IXFH60N20F MOSFET
IXFH60N25Q MOSFET 60 Amps 250V 0.047 Rds
IXFH60N20 MOSFET 60 Amps 200V 0.033 Rds
Top