IXFK20N stock, IXFK20N, IXFK20N120P


PartNumber	IXFK20N120P	IXFK20N120	IXFK20N60
Description	MOSFET 20 Amps 1200V 1 Rds	MOSFET 20 Amps 1200 V 0.75 Ohms Rds
Manufacturer	IXYS	IXYS	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-264-3	TO-264-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	1.2 kV	1.2 kV	-
Id Continuous Drain Current	20 A	20 A	-
Rds On Drain Source Resistance	570 mOhms	750 mOhms	-
Vgs th Gate Source Threshold Voltage	6.5 V	-	-
Vgs Gate Source Voltage	30 V	30 V	-
Qg Gate Charge	193 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	780 W	780 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	HiPerFET	HyperFET	-
Packaging	Tube	Tube	-
Height	26.16 mm	26.16 mm	-
Length	19.96 mm	19.96 mm	-
Series	IXFK20N120	IXFK20N120	-
Transistor Type	1 N-Channel	1 N-Channel	-
Type	Polar Power MOSFET HiPerFET	-	-
Width	5.13 mm	5.13 mm	-
Brand	IXYS	IXYS	-
Forward Transconductance Min	10 S	-	-
Fall Time	70 ns	20 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	45 ns	45 ns	-
Factory Pack Quantity	25	25	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	72 ns	75 ns	-
Typical Turn On Delay Time	49 ns	25 ns	-
Unit Weight	0.352740 oz	0.352740 oz	-

Search Part Number : "IXFK20N", Match & Start with "IXFK20N" - Total : 6

IXFK20N