 |  |  | |
| PartNumber | IXFK32N100X | IXFK32N100P | IXFK32N100Q3 |
| Description | MOSFET 1000V 32A TO-264 Power MOSFET | MOSFET 32 Amps 1000V 0.32 Rds | IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 220 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 6.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 130 nC | 225 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 890 W | 960 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 14 S | 13 S | - |
| Fall Time | 12 ns | 43 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 55 ns | 250 ns |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 76 ns | - |
| Typical Turn On Delay Time | 29 ns | 50 ns | - |
| Height | - | 26.16 mm | - |
| Length | - | 19.96 mm | - |
| Series | - | IXFK32N100 | IXFK32N100 |
| Type | - | Polar Power MOSFET HiPerFET | - |
| Width | - | 5.13 mm | - |
| Unit Weight | - | 0.352740 oz | 0.264555 oz |
| Package Case | - | - | TO-264-3 |
| Pd Power Dissipation | - | - | 1.25 kW |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 32 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 320 mOhms |
| Qg Gate Charge | - | - | 195 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Littelfuse |
IXFK32N100X | MOSFET 1000V 32A TO-264 Power MOSFET | |
| IXFK32N100P | MOSFET 32 Amps 1000V 0.32 Rds | ||
| IXFK32N100X | MOSFET 1KV 32A ULTRA JCT TO-264 | ||
| IXFK32N100P | Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds | ||
| IXFK32N100Q3 | IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A |