 | |  | |
| PartNumber | IXFN60N80P | IXFN60N60 | IXFN60N120 |
| Description | MOSFET DIODE Id54 BVdass800 | MOSFET 600V 60A | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
| Id Continuous Drain Current | 53 A | 60 A | - |
| Rds On Drain Source Resistance | 140 mOhms | 75 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1040 W | 700 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Height | 9.6 mm | 12.22 mm | - |
| Length | 38.23 mm | 38.23 mm | - |
| Series | IXFN60N80 | IXFN60N60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 25.42 mm | 25.42 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 26 ns | 26 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 29 ns | 52 ns | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 110 ns | 110 ns | - |
| Typical Turn On Delay Time | 36 ns | 43 ns | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 380 nC | - |
| Type | - | HiPerFET Power MOSFET | - |
| Forward Transconductance Min | - | 40 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Littelfuse |
IXFN60N80P | MOSFET DIODE Id54 BVdass800 | |
| IXFN60N60 | MOSFET 600V 60A | ||
| IXFN60N120 | ブランドニューオリジナル | ||
| IXFN60N60 | MOSFET N-CH 600V 60A SOT-227B | ||
| IXFN60N80P | MOSFET N-CH 800V 53A SOT-227B |