IXFR14

IXFR140N30P vs IXFR14N100Q2 vs IXFR140N20P

 
PartNumberIXFR140N30PIXFR14N100Q2IXFR140N20P
DescriptionMOSFET 82 Amps 300V 0.026 Ohm RdsMOSFET 14 Amps 1000VMOSFET 75 Amps 200V 0.018 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage300 V1 kV-
Id Continuous Drain Current70 A9.5 A-
Rds On Drain Source Resistance26 mOhms1 Ohms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge185 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation300 W200 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETPolarHT ISOPLUS247 HiPerFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR140N30IXFR14N100IXFR140N20
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar Power MOSFET HiPerFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min50 S--
Fall Time20 ns12 ns90 ns
Product TypeMOSFETMOSFET-
Rise Time30 ns10 ns35 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns28 ns150 ns
Typical Turn On Delay Time30 ns12 ns30 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case--TO-247-3
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--200 V
Vgs th Gate Source Threshold Voltage--5 V
Rds On Drain Source Resistance--22 mOhms
Qg Gate Charge--240 nC
Forward Transconductance Min--50 S
メーカー モデル 説明 RFQ
Littelfuse
Littelfuse
IXFR140N30P MOSFET 82 Amps 300V 0.026 Ohm Rds
IXFR14N100Q2 MOSFET 14 Amps 1000V
IXFR140N30P MOSFET N-CH 300V 70A ISOPLUS247
IXFR14N100Q2 MOSFET 14 Amps 1000V
IXFR140N20P MOSFET 75 Amps 200V 0.018 Rds
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