| PartNumber | IXFX120N30P3 | IXFX120N25P | IXFX120N20 |
| Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 120 Amps 250 V 0.24 Ohm Rds | MOSFET 200V 120A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | 250 V | 200 V |
| Id Continuous Drain Current | 120 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 27 mOhms | 24 mOhms | 17 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 150 nC | 185 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 1.13 kW | 700 W | 560 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFX120N30 | IXFX120N25 | IXFX120N20 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 54 S | 45 S | 77 S |
| Fall Time | 11 ns | 33 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 33 ns | 65 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 130 ns | 110 ns |
| Typical Turn On Delay Time | 26 ns | 30 ns | 40 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.257500 oz |
| RoHS | - | Y | Y |
| Height | - | 21.34 mm | 21.34 mm |
| Length | - | 16.13 mm | 16.13 mm |
| Type | - | PolarHT HiPerFET Power MOSFET | - |
| Width | - | 5.21 mm | 5.21 mm |