IXGX120N6

IXGX120N60A3 vs IXGX120N60B3 vs IXGX120N60B

 
PartNumberIXGX120N60A3IXGX120N60B3IXGX120N60B
DescriptionIGBT Transistors 120 Amps 600VIGBT Transistors 120Amps 600VIGBT 600V 200A 660W TO247
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CasePLUS 247-3PLUS 247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.2 V1.5 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C200 A280 A-
Pd Power Dissipation780 W780 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGX120N60IXGX120N60HiPerFAST
PackagingTubeTubeBulk
Continuous Collector Current Ic Max600 A600 A-
Height21.34 mm--
Length16.13 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.21 mm--
BrandIXYSIXYS-
Continuous Collector Current200 A--
Gate Emitter Leakage Current400 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameGenX3--
Unit Weight0.229281 oz0.229281 oz-
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--PLUS247-3
Power Max--660W
Reverse Recovery Time trr---
Current Collector Ic Max--200A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--PT
Current Collector Pulsed Icm--300A
Vce on Max Vge Ic--2.1V @ 15V, 120A
Switching Energy--2.4mJ (on), 5.5mJ (off)
Gate Charge--350nC
Td on off 25°C--60ns/200ns
Test Condition--480V, 100A, 2.4 Ohm, 15V
メーカー モデル 説明 RFQ
Littelfuse
Littelfuse
IXGX120N60A3 IGBT Transistors 120 Amps 600V
IXGX120N60B3 IGBT Transistors 120Amps 600V
IXGX120N60B IGBT 600V 200A 660W TO247
IXGX120N60C2 IGBT 600V 75A 830W PLUS TO-247
IXGX120N60C3 ブランドニューオリジナル
IXGX120N60B3 IGBT Transistors 120Amps 600V
IXGX120N60A3 IGBT Transistors 120 Amps 600V
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