 | | | |
| PartNumber | IXTH72N20T | IXTH72N30T | IXTH72N20 |
| Description | MOSFET 72 Amps 200V 33 Rds | MOSFET 72 Amps 300V 52 Rds | MOSFET 72 Amps 200V 0.033 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 300 V | 200 V |
| Id Continuous Drain Current | 72 A | 72 A | 72 A |
| Rds On Drain Source Resistance | 33 mOhms | 52 Ohms | 33 mOhms |
| Packaging | Tube | Tube | Tube |
| Series | IXTH72N20 | IXTH72N30 | IXTH72N20 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Number of Channels | - | - | 1 Channel |
| Vgs Gate Source Voltage | - | - | 20 V |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 400 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 21.46 mm |
| Length | - | - | 16.26 mm |
| Transistor Type | - | - | 1 N-Channel |
| Width | - | - | 5.3 mm |
| Fall Time | - | - | 20 ns |
| Rise Time | - | - | 30 ns |
| Typical Turn Off Delay Time | - | - | 80 ns |
| Typical Turn On Delay Time | - | - | 24 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Littelfuse |
IXTH72N20T | MOSFET 72 Amps 200V 33 Rds | |
| IXTH72N30T | MOSFET 72 Amps 300V 52 Rds | ||
| IXTH72N20 | MOSFET 72 Amps 200V 0.033 Rds | ||
| IXTH72N20 | MOSFET 72 Amps 200V 0.033 Rds | ||
| IXTH72N30T | MOSFET 72 Amps 300V 52 Rds | ||
| IXTH72N20T | MOSFET 72 Amps 200V 33 Rds |