 | |  | |
| PartNumber | IXTJ6N150 | IXTJ4N150 | IXTJ36N20 |
| Description | MOSFET High Voltage Power MOSFET | MOSFET High Voltage Power MOSFET | MOSFET N-CH 200V 36A TO-247AD |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.5 kV | 1.5 kV | - |
| Id Continuous Drain Current | 3 A | 2.5 A | - |
| Rds On Drain Source Resistance | 3.85 Ohms | 6 Ohms | - |
| Packaging | Tube | Tube | - |
| Series | IXTJ6N150 | IXTJ4N150 | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 44.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 110 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 21.34 mm | - |
| Length | - | 6.13 mm | - |
| Type | - | High Voltage Power MOSFET | - |
| Width | - | 5.21 mm | - |
| Forward Transconductance Min | - | 2.8 S | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 23 ns | - |
| Typical Turn Off Delay Time | - | 42 ns | - |
| Typical Turn On Delay Time | - | 19 ns | - |
