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| PartNumber | IXTP1R6N100D2 | IXTP1R6N50D2 | IXTP1R6N50P |
| Description | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | MOSFET N-CH MOSFETS (D2) 500V 1.6A | IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 500 V | - |
| Id Continuous Drain Current | 1.6 A | 1.6 A | - |
| Rds On Drain Source Resistance | 10 Ohms | 2.3 Ohms | - |
| Configuration | Single | Single | Single |
| Packaging | Tube | Tube | Tube |
| Series | IXTP1R6N100 | IXTP1R6N50 | IXTP1R6N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 23.7 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 100 W | - |
| Channel Mode | - | Depletion | Enhancement |
| Product | - | MOSFET | - |
| Forward Transconductance Min | - | 1.75 S | - |
| Fall Time | - | 41 ns | 23 ns |
| Rise Time | - | 70 ns | 26 ns |
| Typical Turn Off Delay Time | - | 35 ns | 45 ns |
| Typical Turn On Delay Time | - | 25 ns | 20 ns |
| Tradename | - | - | PolarHV |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 43 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 1.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 6.5 Ohms |
| Qg Gate Charge | - | - | 3.9 nC |
| Forward Transconductance Min | - | - | 0.7 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Littelfuse |
IXTP1R6N100D2 | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | |
| IXTP1R6N50D2 | MOSFET N-CH MOSFETS (D2) 500V 1.6A | ||
| IXTP1R6N50D2 | MOSFET N-CH MOSFETS (D2) 500V 1.6A | ||
| IXTP1R6N100D2 | IGBT Transistors MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
| IXTP1R6N50P | IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds |