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| PartNumber | IXTT140N10P-TRL | IXTT140N10P | IXTT140N10PTRL |
| Description | Discrete Semiconductor Modules PolarHT Power MOSFET | MOSFET 140 Amps 100V 0.011 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | PolarHT | PolarHT Power MOSFET | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-268-3 | TO-268-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | Single | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 26 ns | 26 ns | - |
| Id Continuous Drain Current | 140 A | 140 A | - |
| Pd Power Dissipation | 600 W | 600 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 11 mOhms | 11 mOhms | - |
| Rise Time | 50 ns | 50 ns | - |
| Factory Pack Quantity | 400 | 30 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | PolarHT | PolarHT | - |
| Typical Turn Off Delay Time | 85 ns | 85 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Qg Gate Charge | - | 155 nC | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 5.1 mm | - |
| Length | - | 14 mm | - |
| Series | - | IXTT140N10 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 16.05 mm | - |
| Forward Transconductance Min | - | 45 S | - |
| Unit Weight | - | 0.158733 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Littelfuse |
IXTT140N10P-TRL | Discrete Semiconductor Modules PolarHT Power MOSFET | |
| IXTT140N10P | MOSFET 140 Amps 100V 0.011 Rds | ||
| IXTT140N10PTRL | ブランドニューオリジナル | ||
| IXTT140N10P | IGBT Transistors MOSFET 140 Amps 100V 0.011 Rds |