| PartNumber | IXXH110N65B4 | IXXH100N60B3 | IXXH100N60C3 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors XPT IGBT B3-Class 600V/210Amp | IGBT Transistors XPT IGBT C3-Class 600V/190Amp |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX4 | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247AD | TO-247AD |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | - | - |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 43 ns | - | - |
| Id Continuous Drain Current | 250 A | - | - |
| Pd Power Dissipation | 880 W | 830 W | 830 W |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | XPT | XPT |
| Typical Turn Off Delay Time | 146 ns | - | - |
| Typical Turn On Delay Time | 26 ns | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Technology | - | Si | Si |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
| Collector Emitter Saturation Voltage | - | 1.8 V | 2.2 V |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Continuous Collector Current at 25 C | - | 210 A | 190 A |
| Series | - | IXXH100N60 | IXXH100N60 |
| Gate Emitter Leakage Current | - | 100 nA | 100 nA |
| Unit Weight | - | 0.229281 oz | 0.229281 oz |