| PartNumber | IXYH30N120B4 | IXYH30N120A4 | IXYH30N120C3 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors 1200V XPT GenX3 IGBT |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBT Transistors |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | Power Semiconductor Modules | - |
| Type | GenX4 | GenX4 | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247HV-3 | TO-247-3 | TO-247AD-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 108 ns | 147 ns | - |
| Id Continuous Drain Current | 100 A | 106 A | - |
| Pd Power Dissipation | 500 W | 500 W | 500 W |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBT Transistors |
| Rise Time | 60 ns | 42 ns | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | IGBTs |
| Tradename | XPT | XPT | XPT |
| Typical Turn Off Delay Time | 245 ns | 235 ns | - |
| Typical Turn On Delay Time | 20 ns | 15 ns | - |
| Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Technology | - | - | Si |
| Collector Emitter Voltage VCEO Max | - | - | 1200 V |
| Collector Emitter Saturation Voltage | - | - | 3.7 V |
| Maximum Gate Emitter Voltage | - | - | 30 V |
| Continuous Collector Current at 25 C | - | - | 75 A |
| Series | - | - | IXYH30N120 |
| Continuous Collector Current Ic Max | - | - | 75 A |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Unit Weight | - | - | 1.340411 oz |