 | |  | |
| PartNumber | JANS2N3501 | JANS2N3501/TR | JANS2N3501L |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | - Bulk (Alt: JANS2N3501L) |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 150 V | 150 V | - |
| Collector Base Voltage VCBO | 150 V | 150 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 400 mV | 0.4 V | - |
| Maximum DC Collector Current | 300 mA | 300 mA | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Packaging | Tray | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Minimum Operating Temperature | - | - 65 C | - |
| DC Current Gain hFE Max | - | 300 at 150 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 300 mA, 10 V | - |
| Pd Power Dissipation | - | 1 W | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANS2N3501 | Bipolar Transistors - BJT Small-Signal BJT | |
| JANS2N3501/TR | Bipolar Transistors - BJT | ||
| JANS2N3501 | Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 | ||
| JANS2N3501L | - Bulk (Alt: JANS2N3501L) | ||
| JANS2N3501/TR | Trans GP BJT NPN 150V 300mA 3-Pin TO-39 T/R - Tape and Reel (Alt: JANS2N3501/TR) | ||
| JANS2N3501UB | Trans GP BJT NPN 150V 0.3A 3-Pin Case UB |