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| PartNumber | Jan2N3501 | Jan2N3501L | Jan2N3501/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 150 V | - | 150 V |
| Collector Base Voltage VCBO | 150 V | - | 150 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.4 V |
| Maximum DC Collector Current | 300 mA | - | 300 mA |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| Packaging | Bulk | Tray | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Pd Power Dissipation | 1 W | - | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Package / Case | - | - | TO-39-3 |
| DC Current Gain hFE Max | - | - | 300 at 150 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 20 at 300 mA, 10 V |