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| PartNumber | KSC1008OBU + | KSC1008OBU,1008YBU,KSC10 | KSC1008OBU |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| Manufacturer | - | - | Fairchild Semiconductor |
| Product Category | - | - | Transistors (BJT) - Single, Pre-Biased |
| Series | - | - | - |
| Packaging | - | - | Bulk |
| Unit Weight | - | - | 0.006314 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-92-3 |
| Configuration | - | - | Single |
| Power Max | - | - | 800mW |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 700mA |
| Voltage Collector Emitter Breakdown Max | - | - | 60V |
| DC Current Gain hFE Min Ic Vce | - | - | 70 @ 50mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 400mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 50MHz |
| Pd Power Dissipation | - | - | 0.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 60 V |
| Transistor Polarity | - | - | NPN |
| Collector Emitter Saturation Voltage | - | - | 0.2 V |
| Collector Base Voltage VCBO | - | - | 80 V |
| Emitter Base Voltage VEBO | - | - | 8 V |
| Maximum DC Collector Current | - | - | 0.7 A |
| Gain Bandwidth Product fT | - | - | 50 MHz |
| Continuous Collector Current | - | - | 0.7 A |
| DC Collector Base Gain hfe Min | - | - | 40 |
| DC Current Gain hFE Max | - | - | 400 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| KSC1008OBU + | ブランドニューオリジナル | ||
| KSC1008OBU,1008YBU,KSC10 | ブランドニューオリジナル | ||
| KSC1008OBU,1008YBU,KSC1008-0, | ブランドニューオリジナル | ||
ON Semiconductor |
KSC1008OBU | Bipolar Transistors - BJT NPN Epitaxial Sil |