MJ11032G

MJ11032G vs MJ11032G,MJ11032 vs MJ11032G/MJ11033G

 
PartNumberMJ11032GMJ11032G,MJ11032MJ11032G/MJ11033G
DescriptionDarlington Transistors 50A 120V Bipolar Power NPN
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max120 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO120 V--
Maximum DC Collector Current50 A--
Pd Power Dissipation300 W--
Mounting StyleThrough Hole--
Package / CaseTO-204-2 (TO-3)--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ11032--
PackagingTray--
DC Current Gain hFE Max18000--
Height8.51 mm--
Length38.86 mm--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current50 A--
DC Collector/Base Gain hfe Min1000--
Product TypeDarlington Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.488015 oz--
メーカー モデル 説明 RFQ
MJ11032G Darlington Transistors 50A 120V Bipolar Power NPN
MJ11032G,MJ11032 ブランドニューオリジナル
MJ11032G/MJ11033G ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
MJ11032G Darlington Transistors 50A 120V Bipolar Power NPN
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