 |  | | |
| PartNumber | MMBT3906WT1G | MMBT3906WT1 , MAX6722UTY | MMBT3906WT1G , BZX85B16- |
| Description | Bipolar Transistors - BJT 200mA 40V PNP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 40 V | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.4 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT3906W | - | - |
| Height | 0.85 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.24 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 0.2 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000219 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| MMBT3906WT1G | Bipolar Transistors - BJT 200mA 40V PNP | ||
| MMBT3906WT1 , MAX6722UTY | ブランドニューオリジナル | ||
| MMBT3906WT1G , BZX85B16- | ブランドニューオリジナル | ||
| MMBT3906WT1GONSEMI | ブランドニューオリジナル | ||
| MMBT3906WT1G-CUT TAPE | ブランドニューオリジナル | ||
ON Semiconductor |
MMBT3906WT1 | Bipolar Transistors - BJT 200mA 40V PNP | |
| MMBT3906WT1 | TRANS PNP 40V 0.2A SOT323 | ||
| MMBT3906WT1G | Bipolar Transistors - BJT 200mA 40V PNP |