MMBT6429LT1

MMBT6429LT1G vs MMBT6429LT1

 
PartNumberMMBT6429LT1GMMBT6429LT1
DescriptionBipolar Transistors - BJT 200mA 55V NPNBipolar Transistors - BJT 200mA 55V NPN
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYN
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max45 V45 V
Collector Base Voltage VCBO55 V55 V
Emitter Base Voltage VEBO6 V6 V
Collector Emitter Saturation Voltage0.6 V0.6 V
Maximum DC Collector Current0.2 A0.2 A
Gain Bandwidth Product fT700 MHz700 MHz
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesMMBT6429L-
Height0.94 mm0.94 mm
Length2.9 mm2.9 mm
PackagingReelReel
Width1.3 mm1.3 mm
BrandON SemiconductorON Semiconductor
Continuous Collector Current0.2 A0.2 A
DC Collector/Base Gain hfe Min500500
Pd Power Dissipation225 mW225 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity30003000
SubcategoryTransistorsTransistors
Unit Weight0.000282 oz0.000282 oz
メーカー モデル 説明 RFQ
ON Semiconductor
ON Semiconductor
MMBT6429LT1G Bipolar Transistors - BJT 200mA 55V NPN
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MMBT6429LT1G Bipolar Transistors - BJT 200mA 55V NPN
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