 |  | | |
| PartNumber | MRF21010LSR1 | MRF21010LR5 | MRF21010LR1 |
| Description | RF MOSFET Transistors 10W 28V 2.1 GHZ LDMOS | FET RF 65V 2.17GHZ NI-360 | FET RF 65V 2.17GHZ NI-360 |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Gain | 13.5 dB | - | - |
| Output Power | 2.1 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-360S-3 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 3.94 mm | - | - |
| Length | 9.78 mm | - | - |
| Operating Frequency | 2.1 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 5.97 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 43.75 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Unit Weight | 0.031651 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF21010LSR1 | RF MOSFET Transistors 10W 28V 2.1 GHZ LDMOS | |
NXP Semiconductors |
MRF21010LR5 | FET RF 65V 2.17GHZ NI-360 | |
| MRF21010LR1 | FET RF 65V 2.17GHZ NI-360 | ||
| MRF21010LSR1 | FET RF 65V 2.17GHZ NI-360S | ||
| MRF21010LSR5 | FET RF 65V 2.17GHZ NI-360S | ||
| MRF21010 | ブランドニューオリジナル | ||
| MRF21010L | ブランドニューオリジナル | ||
| MRF21010LS | ブランドニューオリジナル | ||
| MRF21010RL1 | ブランドニューオリジナル | ||
| MRF21010S | ブランドニューオリジナル |