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| PartNumber | MRF5S9101NBR1 | MRF5S9101MBR1 | MRF5S9101MR1 |
| Description | RF MOSFET Transistors 100W 900MHZ26V | FET RF 68V 960MHZ TO2724 | FET RF 68V 960MHZ TO2704 |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | E | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 700 mA | - | - |
| Vds Drain Source Breakdown Voltage | 68 V | - | - |
| Gain | 17.5 dB | - | - |
| Output Power | 100 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-272-4 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 2.64 mm | - | - |
| Length | 23.67 mm | - | - |
| Operating Frequency | 0.86 GHz to 0.96 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 9.07 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | - | - |
| Pd Power Dissipation | 427 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Unit Weight | 0.067412 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF5S9101NR1 | RF MOSFET Transistors 100W 900MHZ26V | |
| MRF5S9101NBR1 | RF MOSFET Transistors 100W 900MHZ26V | ||
NXP Semiconductors |
MRF5S9101MBR1 | FET RF 68V 960MHZ TO2724 | |
| MRF5S9101MR1 | FET RF 68V 960MHZ TO2704 | ||
| MRF5S9101NBR1 | FET RF 68V 960MHZ TO-272-4 | ||
| MRF5S9101NR1 | FET RF 68V 960MHZ TO-270-4 | ||
| MRF5S9101N | MOSFET Transistor, N-Channel, TO-270 | ||
| MRF5S9101NB | ブランドニューオリジナル |