MSD1819A-RT

MSD1819A-RT1G vs MSD1819A-RT1 vs MSD1819A-RT1G , DA115 T1

 
PartNumberMSD1819A-RT1GMSD1819A-RT1MSD1819A-RT1G , DA115 T1
DescriptionBipolar Transistors - BJT 100mA 60V NPN- Bulk (Alt: MSD1819A-RT1)
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.1 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMSD1819A-R--
Height0.85 mm--
Length2.1 mm--
PackagingReel--
Width1.24 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A--
DC Collector/Base Gain hfe Min210--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
メーカー モデル 説明 RFQ
MSD1819A-RT1G Bipolar Transistors - BJT 100mA 60V NPN
MSD1819A-RT1 - Bulk (Alt: MSD1819A-RT1)
MSD1819A-RT1G , DA115 T1 ブランドニューオリジナル
MSD1819A-RT3 ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
MSD1819A-RT1G Bipolar Transistors - BJT 100mA 60V NPN
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