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| PartNumber | NDD02N60Z | NDD02N60Z-1G | NDD02N60ZT4G |
| Description | MOSFET N-CH 600V IPAK | MOSFET N-CH 600V DPAK | |
| Manufacturer | ON | ON | ON |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | Tube | Tube | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package Case | IPAK-3 | IPAK-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 57 W | 57 W | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 1.4 A | 1.4 A | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 4.5 V | - |
| Rds On Drain Source Resistance | 4 Ohms | 4 Ohms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Qg Gate Charge | 10.1 nC | 10.1 nC | - |
| Forward Transconductance Min | 1.7 S | 1.7 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| NDD02N60Z | ブランドニューオリジナル | ||
ON Semiconductor |
NDD02N60Z-1G | MOSFET N-CH 600V IPAK | |
| NDD02N60ZT4G | MOSFET N-CH 600V DPAK |