 |  | | |
| PartNumber | NDD03N60NT4G | NDD03N60Z-1G | NDD03N60ZG |
| Description | MOSFET N-CH 600V IPAK | ||
| Manufacturer | - | ON Semiconductor | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | IPAK-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 61 W | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 1.65 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Rds On Drain Source Resistance | - | 3.3 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Qg Gate Charge | - | 12 nC | - |
| Forward Transconductance Min | - | 2 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor |
NDD03N60ZT4G | MOSFET NFET DPAK 2.6A 3.6R | |
| NDD03N60Z-1G | MOSFET N-CH 600V IPAK | ||
| NDD03N60ZT4G | MOSFET N-CH 600V DPAK | ||
| NDD03N60NT4G | ブランドニューオリジナル | ||
| NDD03N60ZG | ブランドニューオリジナル | ||
| NDD03N60Z | ブランドニューオリジナル |