 |  | | |
| PartNumber | NDD04N60Z | NDD04N60Z-1G | NDD04N60ZG |
| Description | MOSFET N-CH 600V 4A IPAK | ||
| Manufacturer | ON | ON | ON |
| Product Category | FETs - Single | FETs - Single | IC Chips |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | IPAK-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 83 W | - |
| Id Continuous Drain Current | - | 4.1 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Rds On Drain Source Resistance | - | 1.8 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Qg Gate Charge | - | 19 nC | - |
| Forward Transconductance Min | - | 3.3 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| NDD04N60Z | ブランドニューオリジナル | ||
| NDD04N60ZG | ブランドニューオリジナル | ||
| NDD04N60ZT4 | ブランドニューオリジナル | ||
ON Semiconductor |
NDD04N60Z-1G | MOSFET N-CH 600V 4A IPAK | |
| NDD04N60ZT4G | MOSFET N-CH 600V 4.1A DPAK | ||
| NDD04N60Z1G | ブランドニューオリジナル | ||
| NDD04N60ZT4GJIA | ブランドニューオリジナル |