 |  |  | |
| PartNumber | NDF11N50ZH | NDF11N50ZG | NDF11ON |
| Description | MOSFET NFET 500V 10.5A | IGBT Transistors MOSFET 500V 0.52 OHM TO- 220FP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 520 mOhms | - | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | - |
| Series | NDF11N50Z | NDF11N50Z | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 39 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Rds On Drain Source Resistance | - | 520 mOhms | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor |
NDF11N50ZH | MOSFET NFET 500V 10.5A | |
| NDF11N50ZH | IGBT Transistors MOSFET NFET 500V 10.5A | ||
| NDF11N50ZG | IGBT Transistors MOSFET 500V 0.52 OHM TO- 220FP | ||
| NDF11ON | ブランドニューオリジナル |