 |  | | |
| PartNumber | NE350184C | NE350184C-T1 | NE350184C-T1-A |
| Description | RF JFET Transistors Low Noise HJ FET | RF JFET Transistors Low Noise HJ FET | |
| Manufacturer | CEL | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HFET | - | - |
| Technology | GaAs | - | - |
| Gain | 13.5 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 70 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 165 mW | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | Micro-X | - | - |
| Packaging | Bulk | - | - |
| Operating Frequency | 20 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs HFET | - | - |
| Brand | CEL | - | - |
| Forward Transconductance Min | 40 mS | - | - |
| Gate Source Cutoff Voltage | - 2 V | - | - |
| NF Noise Figure | 0.7 dB | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
CEL |
NE350184C | RF JFET Transistors Low Noise HJ FET | |
| NE350184C | FET RF 4V 20GHZ MICRO-X | ||
| NE350184C-T1 | RF JFET Transistors Low Noise HJ FET | ||
| NE350184C-T1-A | ブランドニューオリジナル | ||
| NE350184C-T1A | RF JFET Transistors Low Noise HJ FET | ||
| NE350184C-T1A(PB) | ブランドニューオリジナル |