NE85633-T

NE85633-T1B-A vs NE85633-T1B-R24-A vs NE85633-T1B

 
PartNumberNE85633-T1B-ANE85633-T1B-R24-ANE85633-T1B
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyTRANS NPN 1GHZ SOT-23
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolarNPNNPN
TechnologySiSi-
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.1 A0.1 A-
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
PackagingReelTape & Reel (TR)Cut Tape (CT)
DC Current Gain hFE Max250--
Height1.1 mm--
Length2.9 mm--
Operating Frequency1 GHz--
TypeRF Bipolar Small Signal--
Width1.5 mm--
BrandCEL--
Gain Bandwidth Product fT7 GHz--
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases2SC3356-T1B-A--
Unit Weight0.000282 oz0.007090 oz-
Series---
Package Case-TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-23SOT-23
Power Max-200mW200mW
Current Collector Ic Max-100mA100mA
Voltage Collector Emitter Breakdown Max-12V12V
DC Current Gain hFE Min Ic Vce-80 @ 20mA, 10V50 @ 20mA, 10V
Frequency Transition-7GHz7GHz
Noise Figure dB Typ f-1.1dB @ 1GHz1.4dB ~ 2dB @ 1GHz
Gain-11.5dB9dB
Pd Power Dissipation-0.2 W-
メーカー モデル 説明 RFQ
CEL
CEL
NE85633-T1B-A RF Bipolar Transistors NPN High Frequency
NE85633-T1B-R24-A RF Bipolar Transistors NPN High Frequency
NE85633-T1B-R25-A RF Bipolar Transistors NPN High Frequency
NE85633-T1B-A RF Bipolar Transistors NPN High Frequency
NE85633-T1B TRANS NPN 1GHZ SOT-23
NE85633-T1-A ブランドニューオリジナル
NE85633-T1B-R25 NPN 200MW 12V 100MA 7GHZ
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