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| PartNumber | NESG2101M05-EVPW24-A | NESG2101M05-A | NESG2101M05-EVPW24 |
| Description | RF Bipolar Transistors Silicon Germanium Amp. and Oscillator | RF Bipolar Transistors NPN SiGe High Freq | RF Bipolar Transistors For NESG2101M05-A Power at 2.4 GHz |
| Manufacturer | Renesas Electronics | CEL | CEL |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Evaluation and Development Kits, Boards |
| RoHS | N | Y | - |
| Transistor Type | Bipolar | Bipolar | - |
| Technology | SiGe | SiGe | - |
| Transistor Polarity | NPN | - | - |
| Type | RF Silicon Germanium | RF Silicon Germanium | Transistor |
| Brand | Renesas Electronics | CEL | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Emitter Base Voltage VEBO | - | 1.5 V | - |
| Continuous Collector Current | - | 35 mA | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-343 | - |
| Pd Power Dissipation | - | 175 mW | - |
| For Use With Related Products | - | - | [email protected] |
| Series | - | - | - |
| Frequency | - | - | 2.4GHz |
| Supplied Contents | - | - | Board |