| PartNumber | NP180N04TUG-E1-AY | NP180N04TUJ-E1-AY |
| Description | MOSFET POWER MOSFET | MOSFET MOSFET |
| Manufacturer | Renesas Electronics | Renesas Electronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 180 A | - |
| Rds On Drain Source Resistance | 1.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 260 nC | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 288 W | - |
| Configuration | Single | - |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | - |
| Brand | Renesas Electronics | Renesas Electronics |
| Forward Transconductance Min | 107 S | - |
| Fall Time | 21 ns | - |
| Moisture Sensitive | Yes | Yes |
| Product Type | MOSFET | MOSFET |
| Rise Time | 43 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 104 ns | - |
| Typical Turn On Delay Time | 54 ns | - |
| Unit Weight | 0.077603 oz | 0.077603 oz |