 |  | | |
| PartNumber | NSS12200LT1G | NSS12200LT1 | NSS12200LT1G , FHBAT54-I |
| Description | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 12 V | - | - |
| Collector Base Voltage VCBO | - 12 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Collector Emitter Saturation Voltage | - 0.13 V | - | - |
| Maximum DC Collector Current | - 4 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS12200L | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 2 A | - | - |
| DC Collector/Base Gain hfe Min | 250 | - | - |
| Pd Power Dissipation | 540 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| NSS12200LT1G | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR | ||
| NSS12200WT1G | Bipolar Transistors - BJT 2A 12V Low VCEsat | ||
| NSS12200LT1 | ブランドニューオリジナル | ||
| NSS12200LT1G , FHBAT54-I | ブランドニューオリジナル | ||
ON Semiconductor |
NSS12200WT1G | Bipolar Transistors - BJT 2A 12V Low VCEsat | |
| NSS12200LT1G | Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR |