 | |  | |
| PartNumber | NSVMMBT5087LT1G | NSVMMBT5087LT3G | NSVMMBT5088LT1G |
| Description | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 3 V | - | - |
| Collector Emitter Saturation Voltage | - 300 mV | - | - |
| Maximum DC Collector Current | - 50 mA | - | - |
| Gain Bandwidth Product fT | 40 MHz | 40 MHz | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 800 at - 100 uA, - 5 VDC | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 250 at - 100 uA, - 5 VDC | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| NSVMMBT5087LT1G | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | ||
| NSVMMBT5088LT3G | Bipolar Transistors - BJT SS SOT23 LN XSTR NPN 35V | ||
| NSVMMBT5088LT1G | ブランドニューオリジナル | ||
ON Semiconductor |
NSVMMBT5087LT3G | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | |
| NSVMMBT5088LT3G | TRANS NPN 30V 0.05A SOT23-3 | ||
| NSVMMBT5087LT1G | TRANS PNP 50V 0.05A SOT23-3 | ||
| NSVMMBT5087LT3G | TRANS PNP 50V 0.05A SOT23-3 |