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| PartNumber | NVD4856NT4G | NVD4856NT4G-VF01 | NVD4856N |
| Description | MOSFET NFET DPAK 25V 89A 0.0047R | MOSFET NFET DPAK 25V 89A 0.0047R | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 89 A | 89 A | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Series | NTD4856N | - | NTD4856N |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | NVD4856NT4G-VF01 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 1.45 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 38 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 60 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 73 S | - |
| Fall Time | - | 7.5 ns | - |
| Rise Time | - | 22.5 ns | - |
| Typical Turn Off Delay Time | - | 18.6 ns | - |
| Typical Turn On Delay Time | - | 15.7 ns | - |
| Package Case | - | - | TO-252-3 |
| Id Continuous Drain Current | - | - | 89 A |
| Vds Drain Source Breakdown Voltage | - | - | 25 V |
| Rds On Drain Source Resistance | - | - | 4.7 mOhms |