NVTR4

NVTR4502PT1G vs NVTR4503N vs NVTR4502PT1G-CUT TAPE

 
PartNumberNVTR4502PT1GNVTR4503NNVTR4502PT1G-CUT TAPE
DescriptionMOSFET PFET 30V 1.95A 20MO
ManufacturerON SemiconductorON-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.95 A--
Rds On Drain Source Resistance155 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReel-
SeriesNTR4502PNTR4503N-
Transistor Type1 P-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min3 S--
Fall Time17.5 ns1.6 ns-
Product TypeMOSFET--
Rise Time12 ns5.8 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns14 ns-
Typical Turn On Delay Time5.2 ns5.8 ns-
Unit Weight0.000282 oz0.050717 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-730 mW-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-1.5 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-85 mOhms-
Qg Gate Charge-3.6 nC-
メーカー モデル 説明 RFQ
NVTR4503NT1G MOSFET NFET SOT23 30V 2A 0.110R
NVTR4502PT1G MOSFET PFET 30V 1.95A 20MO
NVTR4503N ブランドニューオリジナル
NVTR4502PT1G-CUT TAPE ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
NVTR4503NT1G MOSFET N-CH 30V 1.5A SOT23
NVTR4502PT1G IGBT Transistors MOSFET PFET 30V 1.95A 20MO
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