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| PartNumber | PBSS5580PA,115 | PBSS5580PA | PBSS5580PA115 |
| Description | Bipolar Transistors - BJT 80V 4A PNP LO VCEsat TRANSISTOR | Now Nexperia PBSS5580PA - Small Signal Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3 | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 80 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Maximum DC Collector Current | - 5 A | - | - |
| Gain Bandwidth Product fT | 110 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 265 | - | - |
| Height | 0.61 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.1 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 4 A | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PBSS5580PA,115 | Bipolar Transistors - BJT 80V 4A PNP LO VCEsat TRANSISTOR | |
| PBSS5580PA,115 | Bipolar Transistors - BJT 80V 4A PNP LO VCEsat TRANSISTOR | ||
| PBSS5580PA | ブランドニューオリジナル | ||
| PBSS5580PA115 | Now Nexperia PBSS5580PA - Small Signal Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3 |